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孔向阳教授学术报告会

【来源:磁学实验室 | 发布日期:2015-09-18 | 作者:magnetism 】     【选择字号:

应物理科学与技术学院暨磁学与磁性材料教育部重点实验室邀请,上海交通大学特聘教授、汽车动力电池材料研究所所长、国家杰出青年基金获得者孔向阳教授,将于2015921-2015923日来我校进行学术访问并做学术报告,欢迎参加!

 

报告人:孔向阳

报告题目:Atomic layer deposition for photovoltaics: applications and prospects

报告时间:922日(星期二)上午10:00

报告地点:格致楼5004报告厅

报告摘要

    Atomic layer deposition (ALD) is emerging technology for the growth of thin films with excellent conformity and thickness control down to atomic levels. These unique features can be beneficial for lots of applications in photovoltaics, such as buffer layers, interface layers, transparent front contacts, photoanodes and surface passivation layers. Herein, we introduce the capability of ALD for photovoltaics in our lab: i) to coat high-aspect ratio surfaces with high-quality layers of Al2O3 as the passivation layer on Si NWs-array-textured c-Si solar cells. The layers of about 20 nm are sufficient to drastically reduce the surface recombination velocity at the interface resulting in solar cells with improved efficiency; ii) the use of ALD to fabricate Mg-doped and S-doped ZnO layers performing the combination of good conductivity and high transmission, potential for the alternatives to CdS as the buffer layers in CIGS thin film solar cells; iii) Cu2ZnSnS4 (CZTS) thin films are synthesized by alternating exposures to complementary chemical precursor vapors in an ALD system. The as-received CZTS thin films with columnar crystalline are dense, uniform and void-free. From the optical absorption spectra, the bandgap of the ALD derived CZTS thin films is in the range from 1.2 to 1.8 eV, indicating it can be used as a good absorber for solar cells. Challenges and prospects of ALD for photovoltaics are also discussed.

 

孔向阳教授简历

    孔向阳,上海交通大学特聘教授,博士生导师。1999年获上海交通大学博士学位。曾在美国佐治亚理工学院、密歇根大学、德国于利希研究中心、英国谢菲尔德大学、澳大利亚西澳大学作访问教授。主要研究领域:新能源材料。研究论文发表在国际上物理、化学以及先进材料等专业领域的权威杂志计80余篇,引用次数超过5000次,其中有2篇论文引用次数超过1000次。此外,还有9项研究成果获得中国发明专利,1项研究成果获得美国发明专利。
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