兰州大学磁学与磁性材料教育部重点实验室

1. Cao Yang, Sui Wenbo, Wang Tao, Si Mingsu, Shi Huigang, Yang Dezheng, Xue Desheng. Light-Induced-Magnetoresistance in p-n Junction Device. IEEE electron device letters. 2020;41(3):509-12.

2021-03-18 磁学实验室

Cao Yang, Sui Wenbo, Wang Tao, Si Mingsu, Shi Huigang, Yang Dezheng*, Xue Desheng*. Light-Induced-Magnetoresistance in p-n Junction Device. IEEE electron device letters. 2020;41(3):509-12.

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下一篇：2.YunJijun,BaiQiaoning,YanZe,ChangMeixia,MaoJian,ZuoYalu,YangDezheng,XiLi*,XueDesheng.TailoringMultilevel‐StableRemanenceStatesinExchange‐BiasedSystemthroughSpin‐OrbitTorque.Advancedfunctionalmaterials.2020;30(15):1909092-n/a.

1. Cao Yang, Sui Wenbo, Wang Tao, Si Mingsu, Shi Huigang, Yang Dezheng*, Xue Desheng*. Light-Induced-Magnetoresistance in p-n Junction Device. IEEE electron device letters. 2020;41(3):509-12.

1. Cao Yang, Sui Wenbo, Wang Tao, Si Mingsu, Shi Huigang, Yang Dezheng, Xue Desheng. Light-Induced-Magnetoresistance in p-n Junction Device. IEEE electron device letters. 2020;41(3):509-12.