应物理科学与技术学院暨磁学与磁性材料教育部重点实验室邀请，上海交通大学特聘教授、汽车动力电池材料研究所所长、国家杰出青年基金获得者孔向阳教授，将于2015年9月21日-2015年9月23日来我校进行学术访问并做学术报告，欢迎参加！

报告人：孔向阳

报告题目：Atomic layer deposition for photovoltaics: applications and prospects

报告时间：9月22日（星期二）上午10:00

报告地点：格致楼5004报告厅

报告摘要

    Atomic layer deposition (ALD) is emerging technology for the growth of thin films with excellent conformity and thickness control down to atomic levels. These unique features can be beneficial for lots of applications in photovoltaics, such as buffer layers, interface layers, transparent front contacts, photoanodes and surface passivation layers. Herein, we introduce the capability of ALD for photovoltaics in our lab: i) to coat high-aspect ratio surfaces with high-quality layers of Al2O3 as the passivation layer on Si NWs-array-textured c-Si solar cells. The layers of about 20 nm are sufficient to drastically reduce the surface recombination velocity at the interface resulting in solar cells with improved efficiency; ii) the use of ALD to fabricate Mg-doped and S-doped ZnO layers performing the combination of good conductivity and high transmission, potential for the alternatives to CdS as the buffer layers in CIGS thin film solar cells; iii) Cu2ZnSnS4 (CZTS) thin films are synthesized by alternating exposures to complementary chemical precursor vapors in an ALD system. The as-received CZTS thin films with columnar crystalline are dense, uniform and void-free. From the optical absorption spectra, the bandgap of the ALD derived CZTS thin films is in the range from 1.2 to 1.8 eV, indicating it can be used as a good absorber for solar cells. Challenges and prospects of ALD for photovoltaics are also discussed.

孔向阳教授简历